MOSFET redundancy module
PULS UK has introduced a 24V lowloss
MOSFET (metal oxide
semiconductor field effect transistor)
redundancy module – YR80. Use of
MOSFET technology means that only
one redundancy module is needed to
build a 40A redundant

PULS UK has introduced a 24V lowloss
MOSFET (metal oxide
semiconductor field effect transistor)
redundancy module – YR80. Use of
MOSFET technology means that only
one redundancy module is needed to
build a 40A redundant system.
Diodes have been replaced by
MOSFET. The company says that the
low on-resistance of the MOSFET
causes a considerably lower voltage
drop than with diodes: at 40A output
current a drop of just 50mV is
present between input and output
terminals. This saves energy and
reduces the heat generated, making
cooling less of a problem.
The YR80 produces losses of just
2.7W at 40A output current including
losses at the terminals, the internal
wiring and the supply circuit
meaning that a heat sink is not needed.
Harry Moore, MD, believes the
YR80’s use of MOSFET technology
gives customers the chance to build
lean, efficient systems at lower cost.
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