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MOSFET redundancy module
25 January 2013
PULS UK has introduced a 24V lowloss MOSFET (metal oxide semiconductor field effect transistor) redundancy module - YR80. Use of MOSFET technology means that only one redundancy module is needed to build a 40A redundant
PULS UK has introduced a 24V lowloss
MOSFET (metal oxide
semiconductor field effect transistor)
redundancy module - YR80. Use of
MOSFET technology means that only
one redundancy module is needed to
build a 40A redundant system.
Diodes have been replaced by MOSFET. The company says that the low on-resistance of the MOSFET causes a considerably lower voltage drop than with diodes: at 40A output current a drop of just 50mV is present between input and output terminals. This saves energy and reduces the heat generated, making cooling less of a problem.
The YR80 produces losses of just 2.7W at 40A output current including losses at the terminals, the internal wiring and the supply circuit meaning that a heat sink is not needed.
Harry Moore, MD, believes the YR80's use of MOSFET technology gives customers the chance to build lean, efficient systems at lower cost.
Diodes have been replaced by MOSFET. The company says that the low on-resistance of the MOSFET causes a considerably lower voltage drop than with diodes: at 40A output current a drop of just 50mV is present between input and output terminals. This saves energy and reduces the heat generated, making cooling less of a problem.
The YR80 produces losses of just 2.7W at 40A output current including losses at the terminals, the internal wiring and the supply circuit meaning that a heat sink is not needed.
Harry Moore, MD, believes the YR80's use of MOSFET technology gives customers the chance to build lean, efficient systems at lower cost.
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